‹ 40V/10A,RDS(ON)= 25mΩ@VGS= 10V ‹ 40V/ 8A,RDS(ON)= 30mΩ@VGS= 4.5V ‹ 40V/ 6A,RDS(ON)= 36mΩ@VGS= 2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Excepti.

z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LC.

The SPN4526 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

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